There is substantial interest in developing new classes of semiconductor and thermoelectric materials exploiting the properties of bismuth. Such materials are increasingly important for the development of optoelectronic, thermoelectric and electronic devices. These include materials for laser diodes, light emitting diodes, solar cells, transistors and spintronic devices. Following on the success of the previous four annual international workshops on bismuth-containing materials, held in Michigan, Surrey, University of Victoria and Arkansas, this meeting will bring together groups undertaking research in the emerging area of bismuth-containing materials and devices for a focused three-day workshop. This is an interdisciplinary meeting bringing together physicists, chemists, materials scientists and engineers to address this important emerging area. Topics will focus on theoretical activities, epitaxial growth, characterization (optical, electrical and structural) and device performance of interest to both academic and industrial researchers.
Conference dates 21 - 23 July 2014
Location Tyndall National Institute Map
Download the Workshop Programme (203kB)
Hélène Carrere (INSA Toulouse) “Spin Properties of Dilute Bismide Alloys”
John David (University of Sheffield) “Characterisation of GaAsBi diodes”
Steven Durbin (Western Michigan University) “Growth and characterization of binary III-Bi thin films”
Rachel Goldman (University of Michigan) “Amphoteric Doping of GaAsBi Alloys with Silicon”
Arunas Krotkus (FTMC, Vilnius) "Growth and characterisation of dilute Bi quantum wells for laser applications"
Shumin Wang (Shanghai Institute of Microsystem and Information Technology) "Bi2Te3 thin films grown by molecular beam epitaxy"
This is the fifth workshop in a series:
The first was held at the University of Michigan in July 2010
The second at the University of Surrey in July 2011
The third at the University of Victoria in July 2012
The fourth at the University of Arkansas in July 2013